Abstract
The probability density function of a-Si, taking into consideration presence of dangling bonds with correlation effect, is derived . The effects of temperature, trap level positions, free carriers concentrations and ratio of capture cross sections on the probability density function have been studied with respect to various positions of donor like and acceptor like trap levels, where it is found by MATLAB that variation of position of acceptor like trap level divides the curve of probability within air gap into three sublevels of values one, zero and the third has values in between. These sublevels have been affected by increasing the temperature of a-Si wafer, changing the concentration of free carriers and position of donor like trap level, while changing of ratio of capture cross section has no effect on the distribution of probability density function
